ISSN 2594-5327
55º Congresso anual — Vol. 55 , num. 1 (2000)
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The heterojunction zinc oxide/p-type monocrystalline silicon (ZnO/p-Si) has been used in the production of gas sensors for environmental pollution control. In this work, thin films of intrinsic ZnO and doped with Samarium and Lantanium in concentrations of 3 at.% were deposited by spray-pyrolysis on p-type monocrystalline silicon (100) substrates. The electrical contacts ZnO/p-Si were characterized by extraction of current-versus-voltage curves (I x V) in the dark. The curves presented peculiar characteristics, in forward and reverse polarization, which demanded the utilization of specific methods in order to obtain the diodes parameters and current transport mechanism through the junctions. The junctions produced from the intrinsic thin films presented the best reverse block. An important characteristic can be mentioned: the contacts presented an open-circuit voltage value higher than 0,01V.
The heterojunction zinc oxide/p-type monocrystalline silicon (ZnO/p-Si) has been used in the production of gas sensors for environmental pollution control. In this work, thin films of intrinsic ZnO and doped with Samarium and Lantanium in concentrations of 3 at.% were deposited by spray-pyrolysis on p-type monocrystalline silicon (100) substrates. The electrical contacts ZnO/p-Si were characterized by extraction of current-versus-voltage curves (I x V) in the dark. The curves presented peculiar characteristics, in forward and reverse polarization, which demanded the utilization of specific methods in order to obtain the diodes parameters and current transport mechanism through the junctions. The junctions produced from the intrinsic thin films presented the best reverse block. An important characteristic can be mentioned: the contacts presented an open-circuit voltage value higher than 0,01V.
Palavras-chave
zinc oxide, spray-pyrolysis, gas sensor
zinc oxide, spray-pyrolysis, gas sensor
Como citar
Ribeiro, Cristina de Souza; Junior, Herval Ramos Paes.
ELECTRICAL CHARACTERIZATION OF ZNO/p-SI CONTACTS,
p. 1612-1619.
In: 55º Congresso anual,
Rio de Janeiro, Brasil,
2000.
ISSN: 2594-5327, DOI 10.5151/2594-5327-C00902
