ISSN 2594-5327
49º Congresso anual — Vol. 49, Num. 1 (1994)
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Resumo
The problem of depth resolution for the chemical analysis of materials is raising to a very high degree of critical importance for a correct caracterisation of modern materials or treatments as multilayered structures (metals or semiconductors),surfaces treatments, protective coatings, adhesive assemblies, etc... The usual resolutions reached until now, on a quantitative analysis basis,are not better than several (even 10) nanometers, and the theoretical ultimate resolution limit attainable tor instance by the SIMS method, which should be one ot two atomic layers, have been only obtained by pure surface methods (static SIMS), but in any case not for in-depth analysis of bulk or multilayered materials. A critical analysis of the factors affecting the depth resolution, from the analyst point of view, sustained by practical examples on actual materials ,will be presented. The different degradation factors encountered are: preexisting roughness at the nanometer scale, sputter-induced roughening, transitory stage of sputtering ion beam implantation, differential sputtering effects. mixing and accelerated diffusion effects, ion-induced segregation phenomena. A unified approach is proposed in order to meet on a quantitative basis this set of phenomena, define the specific physical parameters whose knowledge is necessary for a correct description of the involved effects, and the way to obtain them experimentally, elaborate a comprehensive modelization procedure susceptible to lead to a precise deconvolution of the exprimental profiles and narrow the gap between the experimental and the theoretical limitations of the depth resolution.
Palavras-chave
depth resolution, chemical analysis, multilayered materials, sputtering effects, SIMS
Como citar
Aucouturier, M.; Ceretti, E. Darque; Blaise, G..
Materials Interface Characterisation Under Ion Sputtering: Problems of Depth Resolution in Chemical Analysis,
p. 1-6.
In: 49º Congresso anual,
Rio de Janeiro, Brasil,
1994.
ISSN: 2594-5327, DOI 10.5151/2594-5327-49v1-01-06
