Title

Deposition of hidrogenated tungsten carbide (WC:H) by reactive sputtering

Deposition of hidrogenated tungsten carbide (WC:H) by reactive sputtering

Authorship

MANSANO, RONALDO DOMINGUES; RUAS, RONALDO; MOUSINHO, ANA PAULA; ORDONEZ, NELSON

MANSANO, RONALDO DOMINGUES

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RUAS, RONALDO

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MOUSINHO, ANA PAULA

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ORDONEZ, NELSON

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DOI

10.5151/2594-5327-3823

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Abstract

In this work, reactive magnetron sputtering was used to deposit amorphous hydrogenated tungsten carbide films (WC:H). The targets used were Tungsten (99.95%). In this case different sputtering plasmas were created by varying their parameters. The main parameters in these plasmas are RF power, process pressure and the gaseous composition (mixtures of argon and hydrocarbon gases - acetylene and methane). These layers were deposited on samples of silicon wafer and stainless steel. To analyse this layer was used RBS (Rutherford Back Scattering), SEM (Scanning Electronic Microscopy), and X-Ray. The layer made with Ar and CH₄ shows a high carbon concentration. With this, there is a better structure because of the C–C bonds and more hardness and low friction. This characteristic is very important to behavior of tools during the machining. With the sputtering process it is possible to obtain layers with a gradient of carbon concentration, from pure W to diamond-like carbon structure.

In this work, reactive magnetron sputtering was used to deposit amorphous hydrogenated tungsten carbide films (WC:H). The targets used were Tungsten (99.95%). In this case different sputtering plasmas were created by varying their parameters. The main parameters in these plasmas are RF power, process pressure and the gaseous composition (mixtures of argon and hydrocarbon gases - acetylene and methane). These layers were deposited on samples of silicon wafer and stainless steel. To analyse this layer was used RBS (Rutherford Back Scattering), SEM (Scanning Electronic Microscopy), and X-Ray. The layer made with Ar and CH₄ shows a high carbon concentration. With this, there is a better structure because of the C–C bonds and more hardness and low friction. This characteristic is very important to behavior of tools during the machining. With the sputtering process it is possible to obtain layers with a gradient of carbon concentration, from pure W to diamond-like carbon structure.

Keywords

Tungsten Carbides, Hard Coating, Sputtering Deposition.

Tungsten Carbides, Hard Coating, Sputtering Deposition.