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Proceedings of ABM Annual Congress


ISSN 2594-5327

58th Congresso anual Vol. 58 , num. 1 (2003)


Title

P-T-x Phase Diagrams and Synthesis of Nonstoichiometric Electronic Materials

P-T-x Phase Diagrams and Synthesis of Nonstoichiometric Electronic Materials

Authorship

DOI

10.5151/2594-5327-2961

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Abstract

Definition of nonstoichiometry and some features of P–T–x diagrams with nonstoichiometric compound are considered: maximum (TmmaxT_m^{max}Tmmax​) and congruent (TmcT_m^cTmc​) melting points, difference between the compositions of solid, liquid and vapor at T=TmmaxT = T_m^{max}T=Tmmax​, the width and position of the homogeneity range. Defects and nonstoichiometry and a new technique of the nonstoichiometry control are also discussed.

 

Definition of nonstoichiometry and some features of P–T–x diagrams with nonstoichiometric compound are considered: maximum (TmmaxT_m^{max}Tmmax​) and congruent (TmcT_m^cTmc​) melting points, difference between the compositions of solid, liquid and vapor at T=TmmaxT = T_m^{max}T=Tmmax​, the width and position of the homogeneity range. Defects and nonstoichiometry and a new technique of the nonstoichiometry control are also discussed.

Keywords

Nonstoichiometry, P–T–x phase diagrams, defects.

Nonstoichiometry, P–T–x phase diagrams, defects.

How to cite

Zlomanov, V.P.; Zavrazhnov, A.Ju.; Davydov, A.V.. P-T-x Phase Diagrams and Synthesis of Nonstoichiometric Electronic Materials, p. 2656-2665. In: 58th Congresso anual, Rio de Janeiro, Brasil, 2003.
ISSN: 2594-5327, DOI 10.5151/2594-5327-2961