ISSN 2594-5327
58th Congresso anual — Vol. 58 , num. 1 (2003)
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Abstract
Definition of nonstoichiometry and some features of P–T–x diagrams with nonstoichiometric compound are considered: maximum (TmmaxT_m^{max}Tmmax) and congruent (TmcT_m^cTmc) melting points, difference between the compositions of solid, liquid and vapor at T=TmmaxT = T_m^{max}T=Tmmax, the width and position of the homogeneity range. Defects and nonstoichiometry and a new technique of the nonstoichiometry control are also discussed.
Definition of nonstoichiometry and some features of P–T–x diagrams with nonstoichiometric compound are considered: maximum (TmmaxT_m^{max}Tmmax) and congruent (TmcT_m^cTmc) melting points, difference between the compositions of solid, liquid and vapor at T=TmmaxT = T_m^{max}T=Tmmax, the width and position of the homogeneity range. Defects and nonstoichiometry and a new technique of the nonstoichiometry control are also discussed.
Keywords
Nonstoichiometry, P–T–x phase diagrams, defects.
Nonstoichiometry, P–T–x phase diagrams, defects.
How to cite
Zlomanov, V.P.; Zavrazhnov, A.Ju.; Davydov, A.V..
P-T-x Phase Diagrams and Synthesis of Nonstoichiometric Electronic Materials,
p. 2656-2665.
In: 58th Congresso anual,
Rio de Janeiro, Brasil,
2003.
ISSN: 2594-5327, DOI 10.5151/2594-5327-2961